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| * .---= -= -M= ZF an AMP company z-s?=`= 3 = = - Radar Pulsed Power Transistor, 135W, 20~s Pulse, 1% Duty PH2931 -I 3% 2.9 - 3.1 GHz Features NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Hermetic` FleWCeramic Package Matching Absolute Maximum Ratinas at 25C I Parameter Collector-EmitterVoltage Emitter-Base Voltage 1 Symbol V CES V ES0 `c P TOT T, T STG 1 Rating 80 3.0 12 580 200 -65 to +200 1 Units V V I I C+!:TiER I .003~.031 Collector Current (Peak) Total Power Dissipation JunctionTemperature StorageTemperature A W "C "C UNLESS OTELRWISE NDTE% TOLERANCES ARE (1.52'.05) INCHES (M,LLIMET~~S .060i.DOE f t.005' = 13MM) Electrical Characteristics at 25C Specifications Subject to Change Without Notice. |
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